Ebook Flexible and stretchable medical devices: Part 2
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Ebook Flexible and stretchable medical devices: Part 2
I2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2Science and Engineering. College of Science andI nginnrtiruj. lai Chee Avenue, Kowloon. Hong Kang, SAU, p.u. ChinaShenzhen University, Division ofPhysks, Institute for Advanced Study. Nanhai Avenue. MSS, Shenzhen.Guangdong PR. China•’.ViCTi/fx-n l/riivrrwly. College of I let Ironit Sfivnte and let h Ebook Flexible and stretchable medical devices: Part 2nology, Department OỈ Mil roelet Ironic 1. NanhaiAvenue iCSS. Shenzhen. Guangdong PR. China9.1IntroductionIn modern era, electronic devices such as seEbook Flexible and stretchable medical devices: Part 2
nsors, displays, and actuators are migrating toward thin and lightweight. As essential components required in various electronic devices, memories arcI2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2eed, and low power consumption. Despite considerable achievements in flexible electronic devices, including integrated circuits (ICs), organic light-emitting diodes (OLEDs), and sensors, nonvolatile memories remain under-exploited [11. Nowadays, flash memory devices arc basically constructed by fiel Ebook Flexible and stretchable medical devices: Part 2d effect transistors (FETs) with floating gate design. FTT structure has several merits compared with capacitor or resistor memory structures. It is cEbook Flexible and stretchable medical devices: Part 2
ompatible with IC such as NAND and NOR and also the current complementary mctal-oxidc-semiconductor (CMOS) process. It can be also used for single traI2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2llent retention performance, capability for multibit storage, and suitability for ICs with various functions [51.This chapter focuses on the flexible floating gate memories. We begin with the fundamentals of electronic memories and then describe the basics and the theory of floating gate memory foll Ebook Flexible and stretchable medical devices: Part 2owed by the operating principles of floating gate memory. Next, an overview of the state-of-the-art floating gate memory will be presented. We will alEbook Flexible and stretchable medical devices: Part 2
so discuss how to analyze the mechanical properties of the floating gate memory on flexible substrates.Flexible and Stretchable Medical Devices, FirstI2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2Gate Memory9.2Device Operation of Floating Gate MemoryFigure 9.1a shows the device structure of a typical FET with a bottom gate electrode. On top of the gate electrode, there is an insulating layer, a semiconductor layer, and top source and drain electrodes. The gate voltage can control the current Ebook Flexible and stretchable medical devices: Part 2 flow in the semiconductor channel [6J. The typical transfer curve of FET is shown in Figure 9.1b. In this curve, the threshold voltage (V'th) can beEbook Flexible and stretchable medical devices: Part 2
determined by extrapolating a plot of ƠDSsat)1'2 versus VGS lo /DS equal to 0 is fixed at constant lzDS./Ms« = ^/Ebook Flexible and stretchable medical devices: Part 2
e memory devices are under programming and erasing operation [7j. I he tunneling dielectric layer is relatively thin, which can slop the charge transfI2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2ider the thickness of the tunneling dielectric layer and the speed of program/erase, and retention property' should be optimized together.I o c 2 ■Ọ o g 5 o Ờ5(b)Ebook Flexible and stretchable medical devices: Part 2
oating Gate Memory I 217The charge carriers from the semiconductor can be injected and trapped in the floating gate when a gate bias is applied, and tI2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2erase" operation by applying a reverse bias at the gate electrode [5]. Hie memory effect of floating gate memory is achieved by trapping and de-trapping the charge carriers in the floating gate layer. When we have a look at the transfer curve, Vth can be controlled because the channel conductance ch Ebook Flexible and stretchable medical devices: Part 2anges when the charge carriers arc trapped and de-trapped in the floating gate, ihe programmed state and erased state of floating gate memory device cEbook Flexible and stretchable medical devices: Part 2
ould be confirmed by comparing the V'th or /DS after the "program" operation and “erase" operation. The typical transfer curve of floating gate memoryI2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials S Ebook Flexible and stretchable medical devices: Part 2hole or electron storage element. During the memory operation, the erased state and programmed state can be recognized as ON stale and OFF state, respectively.9.3Charge Injection Mechanism in Floating Gate Memory9.3.1The Hot-electron Injection Mechanism Ebook Flexible and stretchable medical devices: Part 2I2'59Flexible Floating Gate MemoryYe Zhou1f2, Su-Ting Han1’3, and Arul Lenus Roy Vellaisamy ’' City University of Hong Kong. Department of Materials SGọi ngay
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