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Design and modeling of tunnel field effect transistors

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Design and modeling of tunnel field effect transistors

Design and Modeling of Tunnel Field-Effect Transistors&iặi-m.:1036a A®* a< tDesign and Modeling of Tunnel Field-Effect Transistorst £ K a 10306 Ịị 27

Design and modeling of tunnel field effect transistors aDesign and Modeling of Tunnel Field-Effect TransistorsNguyen Dang ChienA dissertation submitted to the graduate division in partial fulfillment of t

herequirements for the degree of Doctor of PhilosophyinElectrical EngineeringatNational Chi Nan UniversityNantou, Taiwan, Republic of China41817Approv Design and modeling of tunnel field effect transistors

ed by:....'5.'.':....9/ .. fiAdvisor:Ac know ledge me n tsFirst and foremost. I would like to express the most gratitude to my advisor. Prof. Chun-Hsi

Design and modeling of tunnel field effect transistors

ng Shih, for his valuable advice and strong support throughout my Ph.D years. His constant interest in my researches has been unwavering lor (he past

Design and Modeling of Tunnel Field-Effect Transistors&iặi-m.:1036a A®* a< tDesign and Modeling of Tunnel Field-Effect Transistorst £ K a 10306 Ịị 27

Design and modeling of tunnel field effect transistors to him for giving me the opportunity to work with him in my Ph.D journey.Special thanks to my labmalcs. both former and current, for being very suppo

rtive and helptill in simulation method, document procedure and Chinese learning during my stay at the Yuan Ze University and the National Chi Nan Uni Design and modeling of tunnel field effect transistors

versity. My experience in Taiwan, through the interaction with my lab members and Taiwanese friends. was very enjoyable and unforgettable.I would also

Design and modeling of tunnel field effect transistors

like to thank the members of my thesis defense committee, Prof. Bing-Yue Tsui. Prof. Yung-llsicn Wu, Prof. Yao-Tsung Tsai, Prof. Jyi-Tsong Lin. and P

Design and Modeling of Tunnel Field-Effect Transistors&iặi-m.:1036a A®* a< tDesign and Modeling of Tunnel Field-Effect Transistorst £ K a 10306 Ịị 27

Design and modeling of tunnel field effect transistors ever be enough to express my deepest gratitude to my parents. Their continuous love, sacrifice, support and encouragement have allowed me to pursue my

aspirations.Taiwan. June 2014Nguyen Dang Chienlo my beloved Hille daughter and wifeii Design and modeling of tunnel field effect transistors

Design and Modeling of Tunnel Field-Effect Transistors&iặi-m.:1036a A®* a< tDesign and Modeling of Tunnel Field-Effect Transistorst £ K a 10306 Ịị 27

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